maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current i c 1.0 a power dissipation p d 2.0 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =120v 50 na i cbo v cb =120v, t a =100c 50 a i ebo v eb =4.0v 50 na bv cbo i c =100 a 180 v bv ceo i c =1.0ma 160 v bv ebo i e =10 a 6.0 v v ce(sat) i c =10ma, i b =1.0ma 0.15 v v ce(sat) i c =50ma, i b =5.0ma 0.20 v v be(sat) i c =10ma, i b =1.0ma 1.00 v v be(sat) i c =50ma, i b =5.0ma 1.00 v CZT5551HC surface mount high current silicon npn transistor sot-223 case central semiconductor corp. tm r0 (28-january 2005) description: the central semiconductor CZT5551HC type is a high current npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. marking code: full part number
central semiconductor corp. tm sot-223 case - mechanical outline CZT5551HC surface mount high current silicon npn transistor r0 (28-january 2005) lead code: 1) base 2) collector 3) emitter 4) collector marking code: full part number electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units h fe v ce =5.0v, i c =1.0ma 80 h fe v ce =5.0v, i c =10ma 80 250 h fe v ce =5.0v, i c =50ma 30 h fe v ce =10v, i c =1.0a 10 f t v ce =10v, i c =10ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz 15 pf
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